| PART |
Description |
Maker |
| AN1369 |
ST6 - GETTING STARTED WITH RAISONANCE IDE FOR THE ST6 MICROCONTROLLER
|
SGS Thomson Microelectronics
|
| AN911 |
ST6 IS EMC CHAMPION
|
SGS Thomson Microelectronics
|
| AN593 |
ST6 - ST62 IN-CIRCUIT PROGRAMMING
|
SGS Thomson Microelectronics
|
| LB1674 LB1674M |
Brushless / Sensorless Motor Driver
Brushless, Sensorless Motor Driver
Monolithic Digital IC
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| AN392 |
ST6 - MICROCONTROLLER (MCU) AND TRIACS ON THE MAINS (110/220V)
|
SGS Thomson Microelectronics
|
| AN1447 |
ST6 - SOFTWARE DRIVER FOR 4-MULTIPLEXED LCD WITH A STANDARD ST62
|
SGS Thomson Microelectronics
|
| AN671 |
Prevention of Data Corruption in ST6 On-Chip EEPROM
From old datasheet system
|
意法半导
ST Microelectronics
STMicroelectronics
|
| TDA4863G TDA4863 Q67040-A4451 Q67040-S4452 |
Power Control ICs - Improved PFC-IC for in SMD-Package
Power Control ICs - Improved PFC-IC for DCM
Boost Controller
|
Philips Semiconductors
INFINEON[Infineon Technologies AG]
|
| IRFN140SMD |
ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）3.9A，的Rds（on）：0.077Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本100V的，身份证（续）3.9A时，RDS（对）：0.077Ω））
|
TT electronics Semelab, Ltd.
International Rectifier, Corp.
Seme LAB
|
| IRFE9130 |
P-Channel Power MOSFET(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)(P沟道功率MOS场效应管(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)) P沟道功率MOSFET（减振钢板基本：- 100V的，身份证（续） 6.1A，Vdgr 0.345V）性（P沟道功率马鞍山场效应管（减振钢板基本 100V的，身份证（续） 6.1AVdgr 0.345V））
|
Seme LAB
|
| IRF9130SMD |
P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
